Method of pattern etching a low K dielectric layer

ABSTRACT

A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered masking structure is used which includes a layer of high-temperature organic-based masking material overlaid by either a patterned layer of inorganic masking material or by a layer of patterned high-temperature imageable organic masking material. The inorganic masking material is used to transfer a pattern to the high-temperature organic-based masking material and is then removed. The high-temperature organic-based masking material is used to transfer the pattern and then may be removed if desired. This method is also useful in the pattern etching of aluminum, even though aluminum can be etched at lower temperatures. A second embodiment of the present invention pertains to a specialized etch chemistry useful in the patterning of organic polymeric layers such as low k dielectrics, or other organic polymeric interfacial layers. This etch chemistry is useful for mask opening during the etch of a conductive layer or is useful in etching damascene structures where a metal fill layer is applied over the surface of a patterned organic-based dielectric layer. The etch chemistry provides for the use of etchant plasma species which minimize oxygen, fluorine, chlorine, and bromine content.

This application is a divisional application of Application Ser. No.09/174,763, now U.S. Pat. No. 6,080,529 filed Oct. 19, 1998, which is acontinuation-in-part of 08/991,219, filed Dec. 12, 1997, and issued asU.S. Pat. No. 6,143,476.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention pertains to a method for etching of patternedlayers. The method is useful in high temperature etch processes wherethe layers are high temperature masking materials or aremetal-comprising layers such as copper, platinum, iridium, and bariumstrontium titanate. The method is also useful in lower temperature etchprocesses in which organic polymeric layers, such as low k dielectrics,are etched to form damascene process structures. The present method mayalso be used for lower temperature etching of metal layers such asaluminum or tungsten, when the pattern geometry is small (less thanabout 0.25 μm) and etch selectivity is a problem.

2. Brief Description of the Background Art

In the field of semiconductor device fabrication, particularly with thecontinuing trend toward smaller device feature sizes, the etch processeswhich are used to construct conductive features such a metalinterconnects and contacts have become particularly critical. The newdevices, having feature sizes in the range of about 0.25 μm and smaller,place an emphasis on both the precise profile achievable during patternetching and on the avoidance of any residue remaining after etch whichcauses problems during subsequent processing or problems in long termdevice function.

We previously worked to develop a plasma etching system which reducesand avoids the formation of residue on the surface of a copper layerduring pattern etching of the copper. The etching systems useful inetching of the conductive material are described in copendingapplication Ser. Nos. 08/891,410, filed Jul. 9, 1997, and 08/911,878,filed Aug. 13, 1997, both of which are hereby incorporated by referenceand both of which are assigned to the assignee of the presentapplication.

We have simultaneously been working to develop an etching process whichpermits the development of patterning masks which can transfer a desiredpattern to adjacent layers in a manner which reduces or avoids theformation of mask residue on the etched structure. Further, we haveworked to develop an etching process useful in etching organic polymericmaterials for damascene processes, where the conductive layer is appliedover the patterned surface of a dielectric layer to form desiredconductive interconnect and contact structures.

FIGS. 1A-1E show a schematic cross-sectional view of a typical plasmaetch stack for etching a metal-comprising layer at temperatures inexcess of about 150° C. as it progresses through a series of stepsincluding the etching of both dielectric and conductive layers. Thisetch stack is of the kind known and used prior to the present invention.FIG. 1A shows a complete etch stack, including, from bottom to top,Substrate 102, which is typically a dielectric layer overlying asemiconductor substrate (such as a silicon wafer substrate) or which maybe the semiconductor material itself, depending on the location on agiven device surface. Barrier layer 104, which prevents the diffusionand/or migration of material between conductive layer 106 and substrate102; conductive layer 106, which is typically aluminum or copper, butmight be tungsten, platinum, or iridium, for example.Anti-reflective-coating (ARC) layer 108, which is typically ametal-containing compound and which enables better imaging of anoverlying patterning layer. Pattern masking layer 110, which istypically a layer of silicon dioxide or similar inorganic material whichcan withstand the high temperatures encountered during etching ofconductive layer 106, and which can be patterned and used as a maskduring such etching. And, photoresist layer 112 which is typically anorganic-based material which is stable at low temperatures and which isused to pattern masking layer 100, which is stable at highertemperatures. In FIG. 1A, photoresist layer 112 has already beenpatterned to provide the feature shape desired to be transferred topattern masking layer 100.

FIG. 1B shows the stack described in FIG. 1A, where the pattern inphotoresist layer 112 has been transferred to pattern masking layer 110,using a standard plasma etching technique. When masking layer 110comprises a silicon-containing material, such as silicon dioxide, theetch plasma typically comprises a fluorine-generating species.Preferably the plasma selectivity is for the silicon dioxide over thephotoresist material.

FIG. 1C shows the next step in the process of etching conductive layer106, where the photoresist layer 112 has been stripped from the surfaceof pattern masking layer 110. This stripping procedure may be a wetchemical removal or may be a plasma etch which is selective for thephotoresist layer 112 over the pattern masking layer 110. Stripping ofphotoresist layer 112 is carried out for two reasons. The organic-basedphotoresist materials typically used for layer 112 would melt or becomedistorted in shape at the temperatures commonly reached during theetching of conductive layer 106. This could lead to distortion of thepattern which is transferred to conductive layer 106. In addition,polymeric species generated due to the exposure of the surface ofphotoresist layer 112 to the etchant plasma tend to contaminate adjacentsurfaces during the etching of conductive layer 106, thereby decreasingthe etch rate of conductive layer 106.

The procedure of using a photoresist material to pattern an underlyingsilicon oxide patterning layer is described in U.S. Pat. No. 5,067,002to Zdebel et al., issued Nov. 19, 1991. Zdebel et al. mention the needto remove the photoresist material prior to etching of underlyinglayers, to avoid contamination of underlying surfaces with thephotoresist material during etching of such underlying layers. DavidKeller describes the use of an ozone plasma for the purpose of dry etchremoval of a photoresist mask from the surface of an oxide hard mask inU.S. Pat. No. 5,346,586, issued Sep. 13, 1994. Mr. Keller also mentionsthat it is easier to etch selectively to a gate oxide when there is nophotoresist present during a polysilicon gate oxide etch step.

FIG. 1D shows the next step in the etching process, where the desiredpattern has been transferred through ARC layer 108, conductive layer106, and barrier layer 104. Typically all of these layers are metalcomprising layers, and a halogen containing plasma can be used to etchthe pattern through all three layers. At this point, the problem is theremoval of the residual silicon dioxide hard masking material and theremoval of residue deposits of the silicon dioxide masking material fromadjacent surfaces. The residual hard masking material is present asresidual masking layer 110, and the residue deposits as 114 on thesurface of the patterned conductive layer 106 and the surface ofsubstrate 102.

In the case of the deposit 114 on the surface of patterned conductivelayer 106, deposit 114 can trap residual chemical etch reactants underdeposit 114 and against the surface of patterned conductive layer 106,leading to subsequent corrosion of conductive layer 106. That corrosionis shown on FIG. 1D as 116.

In addition, when substrate 102 is a low dielectric constant material,for purposes of reducing electrical interconnect delays, residualmasking layer 110 which remains after pattern etching through layers108, 106, and 104 (as shown in FIG. 1D) can deteriorate deviceperformance or cause difficulties in future processing steps(particularly during contact via etch). This makes it important toremove any residual masking layer 110 from the surface of ARC layer 108.

Further, when a dielectric layer 118 is applied over the surface of thepatterned conductive layer 106, as shown in FIG. 1E, if residual maskinglayer 110 is not removed, a non-planar surface 120 is produced. Anon-planar surface creates a number of problems in construction of amulti-conductive-layered device, where additional patterned conductivelayers (not shown) are constructed over the surface 120 of dielectriclayer 118.

With the above considerations in mind, we wanted to develop a patterningsystem, including a multi-layered structure and a method for its usewhich would provide for the easy removal of residual masking layermaterial after completion of the patterning process. During thedevelopment of the etching method we discovered a particular etchchemistry which is equally applicable to etching organic dielectriclayers for formation of contact structures in conventional metallizationprocesses, and in the formation of damascene and dual damascenestructures.

SUMMARY OF THE INVENTION

A first embodiment of the present invention pertains to a method ofpatterning metal-comprising semiconductor device features and conductivefeatures in general, wherein the method provides for the easy removal ofany residual masking layer which remains after completion of a patternetching process. The method provides for a multi-layered maskingstructure which includes a layer of high-temperature organic-basedmasking material overlaid by either a layer of a high-temperatureinorganic masking material (such as silicon oxide, silicon nitride, orsilicon carbide) which can be patterned to provide an inorganic hardmask, or by a layer of high-temperature imageable organic maskingmaterial, such as PPMS, which can be processed and patterned to providea hard mask. The hard masking material is used to transfer a pattern tothe high-temperature organic-based masking material, and then the hardmasking material is removed. The high-temperature organic-based(carbon-based) masking material is used to transfer the pattern to anunderlying semiconductor device feature. The high-temperatureorganic-based masking material can be removed from the surface of thepatterned semiconductor device feature in a manner which reduces oravoids contamination of the patterned feature surface.

In accordance with the present invention, we have developed twopatterning systems which enable the patterning of underlying layers atrelatively high temperatures, ranging between about 150° C. and about500° C., while providing easy removal of any residual masking layerremaining after the patterning process.

The first patterning system uses a multi-layered masking structure whichincludes a layer of high-temperature organic-based masking materialoverlaid by a layer of a high-temperature inorganic masking material,which is further overlaid by a layer of a patterning photoresist.

The patterning method is as follows.

a) The layer of photoresist material is imaged and developed into apattern using techniques known in the art, to produce a patterned maskwhich can be used to transfer the desired pattern throughout themulti-layered masking structure and eventually through at least onedevice feature layer as well.

b) The patterned photoresist is used to transfer the pattern through

i) a layer of high-temperature inorganic masking material; and

ii) a layer of high-temperature organic-based masking material.

Preferably the pattern transfer through the layer of high-temperatureorganic-based masking material is via an anisotropic plasma etchtechnique so that this material is not undercut by the pattern transferprocess.

c) Residual photoresist which remains after pattern transfer is thenremoved from the multilayered structure by plasma etch, using thehigh-temperature inorganic masking layer as an etch stop. Thephotoresist removal is accomplished using an anisotropic etch processwhich typically comprises an oxygen-based plasma etch. The anisotropicstripping of the photoresist prevents or at least substantially reducesany etching of the high-temperature organic-based masking materialduring photoresist removal.

d) Optionally, the layer of high temperature inorganic masking materialmay be removed at this time using a plasma etch technique or a wet etchtechnique designed to minimize any etching of the organic-based maskingmaterial. Preferably, the high temperature inorganic masking material isof a thickness such that it will be automatically removed during etchingof a feature layer (step e).

(e) The pattern is then transferred from the high-temperatureorganic-based masking layer through at least one feature layerunderlying the high-temperature organic-based masking material.

f) Any high-temperature organic-based masking material remaining afterfeature layer patterning is then easily removed using a plasma etchtechnique. When the etched feature layer would be corroded or oxidizedby an oxygen-based plasma, a hydrogen/nitrogen-based plasma etchtechnique is recommended. The removal of organic-based masking materialmay be by a wet stripping technique using a solvent known in the art tobe advantageous in the passivation of the surface of the patternedfeature layer.

Since there is no residual photoresist material remaining from step a)present during etching of the feature layer, there is no layer which islikely to melt or distort in shape during transfer of the pattern fromthe high-temperature organic-based masking material to an underlyingdevice feature layer.

Since the high-temperature organic-based masking layer is easilyremoved, there need be no residual masking layer present in the devicestructure to affect device performance or to cause difficulties duringsubsequent via etch. Preferably, the high-temperature organic-basedmasking layer is formed from α-C and α-FC films deposited using CVDtechniques. Examples of starting materials used to form such filmsinclude CH₄, C₂H₂, CF₄, C₂F₆, C₄F₈, NF₃, and combinations thereof; thereare, of course, numbers of other carbon-containing precursor materialswhich can also be used. The starting materials which contain less (orno) fluorine are preferred.

The second patterning system is different from the first patterningsystem in that it uses a high-temperature pattern-imaging layer ratherthan a more standard photoresist imaging layer. The high-temperaturepattern-imaging layer is stable at temperatures ranging from about 150°C. to about 500° C., compared with photoresist materials which aregenerally stable at about 150° C. or lower. Preferably thehigh-temperature pattern-imaging layer is a plasma-polymerized material;more preferably, the pattern-imaging layer is an organo-siliconcompound, such as plasma polymerized methyl silane (PPMS), which may beimaged by deep UV and which is plasma-developable. However, thehigh-temperature imaging layer may also be formed from a differentsilane-based starting material such as a TEOS-based(tetra-ethyl-ortho-silicate—based) chemistry, and one skilled in the artmay select from other similar materials known in the art.

The patterning method is as follows.

a) A layer of high-temperature imageable material is imaged anddeveloped into a pattern using techniques known in the art, to produce apatterned mask which can be used to transfer the desired pattern throughthe high-temperature organic-based masking material and eventuallythrough at least one device feature layer.

b) After patterning of the high-temperature imageable material, thepattern is transferred through the underlying layer of high-temperatureorganic-based masking material. Preferably the pattern is transferredvia an anisotropic etch technique, whereby the high-temperatureorganic-based masking material is not undercut by the pattern transferstep.

c) The pattern is then transferred from the multi-layered structureformed in steps a) and b) through at least one feature layer underlyingthe high-temperature organic-based masking material. Preferably thepattern is transferred using an anisotropic etching technique so thatany high-temperature imageable material which might remain from step b)is removed during this pattern transfer step. In addition, the use of ananisotropic etching technique reduces or avoids the possibility ofundercutting the high-temperature organic-based material layer duringthe pattern transfer to the underlying device feature layer.

d) Any residual high-temperature organic-based masking material whichremains after pattern transfer is then easily removed using a plasmaetch technique. When the etched feature layer would be corroded oroxidized by an oxygen-based plasma, a hydrogen-based plasma etchtechnique is recommended.

Since there is no low temperature residual photoresist material usedduring this process, there is no layer which is likely to melt ordistort in shape during transfer of the pattern from thehigh-temperature organic masking material to an underlying devicefeature layer.

As previously mentioned, the high-temperature imageable material ispreferably a silane-based starting material such as plasma polymerizedmethyl silane (PPMS), or a TEOS-based (tetra-ethyl-ortho-silicate—based)material, and one skilled in the art may select from other similarmaterials known in the art.

The high-temperature organic-based masking material is preferably chosenfrom materials which can be easily removed by plasma etch techniques orby using a solvent known in the art to be advantageous in thepassivation of the surface of the patterned feature layer. Examples ofsuch materials are provided above with reference to the first patterningsystem.

When the device feature layer which is to be patterned includes a copperlayer, that copper layer is preferably pattern etched using either anenhanced physical bombardment technique or a plasma etching techniquewhich generates sufficient hydrogen to protect the copper surface duringpatterning.

The above-described method is also useful in the pattern etching ofaluminum or tungsten, even though these metals can be etched at lowertemperatures, typically below about 200° C. (because the etch reactionbyproducts are more volatile). When the feature size of analuminum-comprising structure is about 0.25 μm and smaller, use of ahard mask patterning layer, such as silicon dioxide, silicon nitride, orsilicon carbide provides a sufficiently long mask lifetime duringetching of an underlying aluminum-comprising layer. Further, since theselectivity toward aluminum is better when such a hard mask patterninglayer is used rather than a typical organic-based photoresist, themasking layer thickness can be less, the aspect ratio is lower, and thepossibility of shading damage to the device structure is reduced. Thepresent method makes removal of the hard masking material possiblewithout damage to the substrate, which is advantageous in subsequentprocessing.

A second embodiment of the present invention pertains to a specializedetch chemistry useful in the patterning of organic polymeric layers suchas low dielectric constant (low k dielectric) materials and otherorganic polymeric interfacial layers. This etch chemistry is especiallyuseful in a multilayered substrate of the kind described above. It isalso useful in etching damascene structures where a metal fill layer isapplied over the surface of a patterned organic-based dielectric layer.

In particular, when the organic, polymeric material being etched servesas a patterning mask for etch of a copper film, or when the organic,polymeric material being etched is part of a damascene structure whichis to be filled with copper, the etch chemistry provides for use ofetchant plasma species where the oxygen, fluorine, chlorine, and brominecontent is minimized. Preferably, essentially none of the plasma sourcegas material furnishes reactive species comprising oxygen, fluorine,chlorine, or bromine. When a patterning mask for etch of a copper filmis prepared, should these etchant species contact the copper film, thefilm is oxidized or otherwise corroded. In addition, etchant specieswhich contain oxygen, fluorine, chlorine or bromine leave deposits ofetch byproduct on etched contact via and damascene structure surfaceswhich may cause oxidation and corrosion of copper depositions made oversuch surfaces. Further, during etching of some organic-comprisingmaterials, oxygen and fluorine etchant species tend to have adetrimental effect on a typical contact via or trench etch profile.

When the conductive material is aluminum, tungsten, platinum, oriridium, rather than copper, the presence of oxygen is more acceptableduring etch of the organic polymeric material. When the metal fill layeris tungsten, platinum, or iridium, the effect of the presence offluorine, chlorine and bromine depends on the particular material used,as is known to one skilled in the art. However, even when the conductivematerial is aluminum, tungsten, platinum or iridium, oxygen-comprisingor halogen etchant species are typically used as additives to increaseetch rate or improve etch profile, or to control residue on an etchsurface, but are not the principal etchant species for etching of theorganic, polymeric material.

The preferred etch plasma of the present invention is ahydrogen/nitrogen-based plasma, wherein the principal etchant species ishydrogen, or nitrogen, or a combination thereof. In addition, asdescribed above, depending on the materials used in the devicefabrication, the concentration of at least one etchant species such asoxygen, chlorine, fluorine, and bromine is preferably minimized. Toprovide a hydrogen/nitrogen-based plasma, the plasma etchant speciescomprise principally hydrogen, or principally nitrogen, or principally amixture thereof. To provide these species, the plasma source gascomprises at least one of the materials selected from the groupconsisting of hydrogen, nitrogen, ammonia and compounds thereof,hydrazine and compounds thereof, hydroazoic acid, and combinationsthereof. When the conductive material to be used in the device is notcopper, but is instead aluminum, tungsten, platinum, or iridium, theplasma source gas may comprise hydroxylamine or a compound thereof. Themost preferred plasma source gas comprises ammonia; or hydrogen andnitrogen; or a combination of ammonia with hydrogen, nitrogen, or both.

Other gases which provide essentially non-reactive etchant species, suchas argon, helium, neon, krypton, and xenon may be present in varyingamounts, by way of example, and not by way of limitation.

In addition, the addition of a small amount of hydrocarbon may bebeneficial in the control of etch profile of the high temperatureorganic polymeric material.

It is also possible to use a hydrocarbon-based plasma for etching of thehigh temperature organic polymeric material. The hydrocarbon-basedplasma may optionally include a lesser amount of a component selectedfrom the group consisting of ammonia, hydrogen, nitrogen, andcombinations thereof. Other gases which provide essentially non-reactiveetchant species, such as argon, helium, neon, krypton, and xenon mayalso be present in varying amounts, by way of example.

When an integrated series of process steps is carried out in a singleprocess chamber and a process step produces a byproduct which includesat least one element harmful to the final device structure, wherein thatelement is selected from the group consisting of oxygen, fluorine,chlorine, or bromine, it is advisable to dry clean the process chambersubsequent to that process step and prior to proceeding to an etch stepusing the present method for etching an organic polymeric material. Thisis particularly important when the feature size of the pattern beingetched is 0.25 μm or smaller. As an alternative to repetitive cleaningof process chambers, it is possible to use an integrated processingsystem which provides several processing chambers which areinterconnected in a manner such that a substrate can be passed fromchamber to chamber under a controlled environment, and to reserve one ofsuch process chambers for etching using the present method etchchemistry.

An economical method of performing the etch techniques described aboveutilizes a combination of different plasmas wherein the differentetchant gases used to create each plasma are sufficiently compatiblethat all of the etching steps can be carried out in individual(separate) steps in the same etch chamber, if desired. One skilled inthe art can select from the various known plasma etchants to obtain thebest economies of function which will provide etched features meetingdimensional and surface stability requirements.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A through 1E show a schematic of the cross-sectional view of aprior art multilayered structure useful in plasma etching (a plasma etchstack), as the etch stack progresses through a series of process steps.This etch stack is generally used for etching of a device featureconductive material layer.

FIG. 2A shows a schematic of the cross-sectional view of a firstpreferred embodiment plasma etch stack of the present invention.

FIGS. 2B through 2G show the changes in the etch stack as it progressesthrough the method steps of the present invention.

FIG. 3A shows a schematic of the cross-sectional view of a secondpreferred embodiment plasma etch stack of the present invention.

FIGS. 3B through 3G show the changes in the etch stack as it progressesthrough the method steps of the present invention.

FIG. 4A shows a schematic of a cross-sectional view of a series ofetched contact vias, where each via is created through a multilayeredstructure which includes, from top to bottom, a layer of silicon oxidepatterned hard mask, and a layer of FLARE™ low dielectric constantmaterial. Underlying the low k dielectric is a layer of titaniumnitride, and underlying the titanium nitride is a layer of aluminum. Dueto the etch chemistry used to etch the via, the low k dielectric, apoly(arylene ether) is severely undercut beneath the patterning siliconoxide hard mask.

FIG. 4B shows a schematic of a cross-sectional view of the same etchedcontact vias shown in FIG. 4A, except that the etch chemistry of thepresent invention was used to provide nearly straight sidewalls on theetched via.

FIG. 5 is a schematic of a process chamber and auxiliary apparatus ofthe kind which can be used to carry out the plasma etching stepsdescribed herein.

FIG. 6 is a schematic of a processing system which includes a variety ofprocess chambers which permit transfer of substrates from one chamber toanother under a controlled environment. For example, the substrate isnot exposed to air or moisture.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In accordance with the present invention, we have developed twopatterning systems which enable the patterning of underlying layerswhile providing for the easy removal of masking layers used toaccomplish the patterning. Further, we have developed an etch chemistrywhich is useful in the pattern etching of organic, polymeric materiallayers during formation of contact/interconnect structures. The etch maybe for mask opening prior to etch of an underlying conductive layer, ormay be for preparation of an electrical contact via in a generalprocess, or may be for preparation of a damascene or dual damascenestructure.

I. DEFINITIONS

As a preface to the detailed description, it should be noted that, asused in this specification and the appended claims, the singular forms“a”, “an”, and “the” include plural referents, unless the contextclearly dictates otherwise. Thus, for example, the term “asemiconductor” includes a variety of different materials which are knownto have the behavioral characteristics of a semiconductor, reference to“a conductive material” includes aluminum, aluminum alloys, copper,copper alloys, platinum, platinum alloys, iridium, iridium alloys,tungsten, tungsten alloys, combinations thereof, and other conductivematerials which would be suitable in the application described.

Specific terminology of particular importance to the description of thepresent invention is defined below.

The term “α-C” refers to high temperature amorphous carbon-comprisingmaterials which are typically produced by CVD in a plasma chamber.

The term “α-FC” refers to high temperature fluorocarbon materials whichare typically produced by CVD in a plasma chamber.

The term “aluminum” includes alloys of aluminum of the kind typicallyused in the semiconductor industry. Such alloys include aluminum-copperalloys, and aluminum-copper-silicon alloys, for example. Typically suchalloys of aluminum comprise about 0.5% copper.

The term “anisotropic etching” refers to etching which does not proceedin all directions at the same rate. If etching proceeds exclusively inone direction (e.g. only vertically), the etching process is said to becompletely anisotropic.

The term “bias power” refers to the power used to control ionbombardment energy and the directionality of ions toward a substrate.

The term “copper” refers to copper and alloys thereof, wherein thecopper content of the alloy is at least 80 atomic % copper. The alloymay comprise more than two elemental components.

The term “feature” refers to metal lines and openings on a substrate,and other structures used to form a semiconductor device.

The term “high density plasma” refers to, but is not limited to, aplasma having an electron density of at least 5×10¹⁰e⁻/cm³.

The term “hydrogen-based plasma” refers to a plasma having asufficiently high hydrogen content to reduce the corrosion of theexterior surfaces of etched features by incident reactive species whichare present due to etching of adjacent surfaces. A preferred example ofa hydrogen-based plasma is described in co-pending application Ser. No.08/911,878, filed Aug. 13, 1997.

The term “hydrogen/nitrogen-based plasma” refers to a plasma havingprincipally hydrogen-comprising and/or nitrogen-comprising etchantspecies. In addition, depending on the materials used in the devicefabrication, the concentration of at least one etchant species generatedfrom a source comprising an element selected from the group consistingof oxygen, chlorine, fluorine, and bromine is minimized. A preferredplasma source gas for producing a hydrogen/nitrogen-based plasmacomprises ammonia; or hydrogen and nitrogen; or a combination of ammoniawith hydrogen, nitrogen, or both. Other essentially chemically inertcomponents such as argon, helium, neon, krypton, and xenon may bepresent in varying amounts, by way of example, and not by way oflimitation.

The term “hydrocarbon-based plasma refers to a plasma having principallyhydrogen and carbon-comprising etchant species. The hydrocarbon-basedplasma may optionally include a lesser amount of a component selectedfrom the group consisting of ammonia, hydrogen, nitrogen, andcombinations thereof. Other gases which provide essentially non-reactiveetchant species may be present in varying amounts. In addition,depending on the conductive material to be used in the device structure,the plasma source gas may contain an additive element or compound (forpurposes of controlling etch rate or profile) which generates up toabout 30 atomic % or less of the total etchant species, where suchadditive etchant species comprises oxygen, or fluorine, or chlorine, orbromine. Preferred plasma source gases for producing a hydrocarbon-basedplasma comprises methane or α-carbon.

The term “ion bombardment” refers to physical bombardment by ions (andother excited species of atoms which are present with the ions) toremove atoms from a surface, where physical momentum transfer is used toachieve the atom removal.

The term “isotropic etching” refers to an etching process where etchingcan proceed in all directions at the same rate.

The term “oxygen-based plasma” refers to a plasma which is rich inoxygen content either in neutral or charged form. The plasma may includeadditives comprising nitrogen, or hydrogen, or chlorine, or fluorine, orcarbon, by way of example and not by way of limitation. Additives suchas CF₄, CH₄ and NH₃ are commonly used.

The term “plasma” refers to a partially ionized gas containing an equalnumber of positive and negative charges, as well as some other number ofnon-ionized gas particles.

The term “plasma-polymerized methysilane” refers to a new deep UV resistmaterial which is deposited from a low power RF plasma discharge inmethylsilane at room temperature. This material possesses an amorphousorganosilicon hydride network structure. While initially opaque in thedeep UV (i.e. 248 nm), a typical 0.25 micron thick film undergoesefficient photooxidation with bleaching to form glass-like siloxanenetwork material.

The term “shading damage” refers to, but is not limited to, damage todevice structures which occurs when a conductive feature becomes chargedwith ions, as electrons are trapped by the mask over a high aspect ratiofeature, creating a voltage across device features which results in ashift in the performance parameters of the device.

The term “source power” refers to the power used to generate ions andneutrals whether directly in an etching chamber or remotely as in thecase of a microwave plasma generator.

The term “substrate” includes semiconductor materials, glass, ceramics,polymeric materials, and other materials of use in the semiconductorindustry.

II. AN APPARATUS FOR PRACTICING THE INVENTION

The preferred embodiment etch processes described herein were carriedout in a CENTURA® Integrated Processing System available from AppliedMaterials, Inc. of Santa Clara, Calif. The system is shown and describedin U.S. Pat. No. 5,186,718, the disclosure of which is herebyincorporated by reference. This equipment included a Decoupled PlasmaSource (DPS) of the kind described by Yan Ye et al. at the Proceedingsof the Eleventh International Symposium of Plasma Processing, May 7,1996 and as published in the Electrochemical Society Proceedings, Volume96-12, pp. 222-233 (1996). The plasma processing chamber enables theprocessing of an 8 inch (200 mm) diameter silicon wafer.

A schematic of the processing chamber is shown in FIG. 5 which shows anetching process chamber 510, which is constructed to include at leastone inductive coil antenna segment 512 positioned exterior to adielectric, dome-shaped ceiling 520, and connected to a radio frequency(RF) power generator 518. Interior to the process chamber is a substrate514 support pedestal 516 which is connected to an RF frequency powergenerator 522 through an impedance matching network 524, and aconductive chamber wall 530 which serves as the electrical ground 534.

The semiconductor substrate 514 is placed on the support pedestal 516and gaseous components are fed into the process chamber through entryports 526. A plasma is ignited in process chamber 510 using techniqueswell known in the industry. Pressure interior to the etch processchamber 510 is controlled using a vacuum pump (not shown) and a throttlevalve 527 connected to a process chamber gas exit line 528. Thetemperature on the surface of the etch chamber walls is controlled usingliquid-containing conduits (not shown) which are located in the walls ofthe etch chamber 510. For experimental purposes, it was desired tomaintain the substrate temperature above about 150° C. and below about350° C., and this was accomplished using a resistivity heater applied tothe substrate support pedestal. The surface of the etching chamber 510walls was maintained at about 80° C. using the cooling conduitspreviously described. In the case of a production process, preferably,the substrate support platen provides for backside heating or cooling ofthe substrate.

FIG. 6 is a schematic of a processing system 600 which includes avariety of process chambers which permit transfer of substrates from onechamber to another under a controlled environment. Typically, aprocessing system 600 includes etch chambers 602 and 604 (which arepreferably etch chambers where the power source for plasma generation isseparately controlled from the power source used to apply bias to asubstrate). In addition, system 600 frequently includesstripping-passivation chambers 606 and 608 which provide for the removalof contaminants from the etched surface; a substrate orienter 612; acool-down chamber 610, and loadlocks 614 and 616.

III. A FIRST PREFERRED EMBODIMENT ETCH STACK AND ITS METHOD OF USE

FIGS. 2A-2G illustrate the first preferred embodiment etch stack of thepresent invention as it progresses through method steps used inpreparing a device structure. FIGS. 2A through 2C show the opening of amasking structure in preparation for etch of an underlying conductivelayer; FIGS. 2D through 2F show etching of the conductive layers; andFIG. G shows the application of a “capping” dielectric layer. FIG. 2Ashows the complete etch stack, including: Substrate 212, which was adielectric layer of silicon dioxide approximately 1,000 Å thickoverlying a silicon wafer surface (not shown). A layer 214, of tantalumnitride approximately 500 Å thick was deposited over substrate 212. Alayer 216 of copper approximately 8,000 Å thick was deposited overbarrier layer 214. A layer 218 of tantalum nitride about 500 Å thick,which served as a barrier layer, was deposited over copper layer 216. Alayer 220 of a high-temperature organic-based pattern masking materialcomprising α-FC was deposited over tantalum nitride layer 218 using ahigh density plasma CVD technique, to produce a layer approximately8,000 Å thick. A silicon dioxide pattern masking layer 222,approximately 1,000 Å thick, which served as a high-temperatureinorganic masking material, was applied over the high-temperature α-FClayer 220. And, finally, a photoresist imaging layer 224, of I—linestepper material (any of these materials which are commonly used in theart are acceptable) approximately 10,000 Å thick was applied over thesurface of high-temperature inorganic masking material layer 222.

In FIG. 2A, I—line photoresist imaging layer 224 has already beenpatterned to provide the feature shape desired to be transferred to thesilicon dioxide pattern masking layer 222 and high-temperatureorganic-based masking layer 220. Preferably, the thickness ofphotoresist imaging layer 224 is designed so that it is nearly totallyconsumed during transfer of the pattern through the high-temperatureinorganic masking layer 222 and high-temperature organic-based maskinglayer 224.

FIG. 2B shows the plasma etching stack described in FIG. 2A, where thepattern in photoresist imaging layer 224 has been transferred throughthe high temperature silicon dioxide inorganic pattern masking layer 222and slightly into the α-FC-comprising layer 220. This pattern transferwas accomplished in the Centura® Integrated Processing System previouslydescribed, using a fluorine-containing plasma of the kind generallyknown in the art for etching silicon dioxide. During the etching ofsilicon dioxide layer 222, the plasma feed gas to the process chamberwas about 100 sccm of argon and 30 sccm of CHF₃. The substratetemperature during etching was about 20° C., with the process chamberwalls at about 80° C. The process chamber pressure during etching wasabout 10 mT. The source power to the plasma inducing coil was about 1800W @ 2 MHZ and the bias power to the substrate support platen was about300 W @ 13.56 MHZ. A plasma was ignited using techniques standard in theart, and the time period required for pattern transfer through silicondioxide layer 222 was approximately 15 seconds. Subsequently, withoutextinguishing the plasma, the plasma feed gas was changed to anoxygen-based plasma for etching the α-FC layer 220. The plasma feed gasto the process chamber was 100 sccm of O₂, and 10 sccm of N₂. Thesubstrate temperature during etching was about 20° C., with the processchamber walls at about 80° C. The process chamber pressure duringetching was about 10 mT. The source power to the plasma inducing coilwas about 1000 W @ 2 MHZ and the bias power to the substrate supportplaten was about 250 W @ 13.56 MHZ. The time period required for patterntransfer through α-FC layer 220 was approximately 80 seconds. Analternative to using this oxygen-based plasma is to use thehydrogen/nitrogen-based plasma etch chemistry of the present invention,which will be discussed in detail subsequently.

FIG. 2C shows the plasma etching stack described in FIG. 2B, afterremoval of residual photoresist imaging layer 224. Residual photoresistimaging layer 224 was removed using the oxygen-based plasma and etchconditions described with reference to the α-FC layer 220, with an etchtime period of about 20 seconds. The hydrogen/nitrogen-based plasma etchchemistry could be used for removal of this photoresist layer as well.The underlying layer 222 of silicon dioxide was used as an etch stopover high-temperature organic-based layer 220, while tantalum nitridebarrier layer 218 was used as the etch stop protecting copper layer 216from oxidation. The plasma and process conditions described aboveprovided anisotropic stripping of photoresist imaging layer 224, so thathigh-temperature α-FC masking layer 220 would not be undercut during theremoval of residual photoresist imaging layer 224.

It is preferable to use the hydrogen/nitrogen-based etch chemistry foretching both photoresist layer 224 and high-temperature organic-basedlayer 220 when copper is the conductive layer, as this reduces thepotential for oxidation of the copper.

FIG. 2D shows an optional step in which the layer 222 of silicon dioxidemay be removed. However, for most applications, such as this applicationwhere feature layer 216 comprises a metal (copper), if the thickness ofsilicon dioxide layer 222 is properly designed, this layer will beautomatically removed during the patterning of feature layer 216.Preferably the etch selectivity of the materials is such that layer 222etches more rapidly than layer 220, so that the desired mask profile isobtained.

FIG. 2E shows the plasma etching stack after transfer of the patternthrough tantalum nitride barrier layer 218, copper layer 216, andtantalum nitride barrier layer 214 to the upper surface of silicondioxide dielectric layer 212. This etching of the conductive copperlayer 216 and accompanying barrier layers 218 and 214 was accomplishedusing a feed gas to the process chamber of 70 sccm of HCl, 50 sccm ofN₂, and 5 sccm of BCl₃. The substrate temperature during etching wasabout 250° C., with the process chamber walls at about 80° C. Theprocess chamber pressure during etching was about 20 mT. The sourcepower to the plasma inducing coil was about 1,500 W @ 2 MHZ and the biaspower to the substrate support platen was about 600 W @ 13.56 MHZ. Theend point of etch through tantalum nitride barrier layer 214 wasmeasured by optical monitoring using a sensor measuring at a wavelengthof about 3,590 Å. The time period required for pattern transfer throughthe tantalum nitride barrier layer 218, copper layer 216, and tantalumnitride barrier layer 214 was about 150 seconds. A hydrogen-based etchchemistry was used during patterning of the copper feature layer 216 toavoid corrosion of the copper. This hydrogen-based etch chemistry usesHCI as its principal etchant species source (to produce hydrogen andchlorine-comprising etchant species), and is distinguishable from ahydrogen/nitrogen-based etch chemistry which uses principallyhydrogen-comprising and/or nitrogen-comprising etchant species.

Depending on the relative thicknesses of layers α-FC layer 220, tantalumnitride 218, copper layer 216, and tantalum nitride layer 214, and theetching conditions used, there should be enough of the α-FC layer 220remaining at the end of the etch process to provide CD (criticaldimension) control. Therefore, a separate process is needed to removethe remaining portion of this α-FC layer. The process for stripping theα-FC layer may be carried out in the feature patterning etch chamber orin a downstream plasma chamber.

FIG. 2F shows the patterned copper feature layer 216 with accompanyingbarrier layers 214 and 218, after removal of the remaining portion ofthe α-FC layer 220. The α-FC layer 220 may be removed via anisotropicstripping using a hydrogen-based chemistry of the kind described above.The α-FC layer may also be removed using a wet stripping process using asolvent which assists in the passivation of the etched copper featuresurface. In the present instance, a hydrogen/nitrogen-based plasma wasused in combination with an anisotropic dry stripping technique, whereinthe feed gas to the process chamber was 100 sccm of H₂. The substratetemperature during etching was about 45° C., with the process chamberwalls at about 80° C. The process chamber pressure during etching wasabout 10 mT. The source power to the plasma-inducing coil was about1,000 W @ 2 MHZ and the bias power to the substrate support platen wasabout 200 W @ 13.56 MHZ. The time period required for stripping of theremaining portion of the α-FC layer 220 was about 120 seconds. If theconductive layer 216 had been aluminum, tungsten, platinum, or iridium,an oxygen-based plasma could have been used to remove the α FC layer 220without concern about corrosion of the conductive layer.

FIG. 2G shows the application of a dielectric capping layer 230 of a lowdielectric constant material such as an α-C or an α-FC over patternedtantalum nitride layer 218, copper layer 216, tantalum nitride layer214, and silicon dioxide substrate 212. The capping layer 230 providedelectrical isolation between the conductive copper layer 216 and thesurrounding environment. Due to the thinness of tantalum nitride layer218, the upper surface 219 of the structure was far more planar than thesurface 120 observed for the prior art planarization layer illustratedin FIG. 1E. Preferably the α-C or an α-FC is applied using a vapordeposition technique known in the art, although spin-on techniques, forexample, are also acceptable.

One skilled in the art will recognize that high-temperature inorganicmasking materials other than silicon oxide can be used as the cappinglayer overlying the high-temperature organic-comprising maskingmaterial. In addition, one skilled in the art will recognize thathigh-temperature organic-based masking materials other than α-FC, suchas α-C, polyimide, parylene, and teflon, for example, can be used.Anti-reflective/barrier layer materials other than tantalum nitride,such as silicon oxynitride, tantalum, titanium nitride, tungstentitanate, and tungsten nitride may also be used. And finally, the methodis not limited to the etching of device features which utilize copper asthe conductive material. Other conductive materials which require highetch temperatures (in excess of about 200° C.), such as platinum,silver, gold, iridium, for example, can be used. Further the methodoffers advantages in the etching of conductive materials which requirelower etch temperatures (below about 200° C.), such as aluminum ortungsten, when the feature size is below about 0.25 μm and selectivityto the conductive material over masking materials makes control of theetch process difficult.

FIGS. 2A through 2C can also be used to describe a second embodiment ofthe present invention in which the specialized etch chemistry previouslydescribed is used to prepare a contact via structure. If the conductivematerial shown in FIGS. 2A through 2C did not form a layer 216 (asshown) but instead formed a series of lines which ran perpendicular intothe page and parallel to each other at locations 221 (surrounded by aninter-metal dielectric), openings 223 could be used to form contact viasby deposition of a conductive fill material (not shown) therein. By wayof explanation, with reference to FIGS. 2A through 2C, if layer 220 is alow k dielectric (or other dielectric organic polymer layer), subsequentto patterning of the layer, a diffusion barrier layer and/or a wettinglayer (not shown) is applied over the etched surfaces, followed bydeposition of a conductive layer (not shown). The excessive conductivematerial (not shown) overlying the mask patterning layer 222 (and maskpatterning layer 222, if desired) is then removed either by etch back orby chemical-mechanical polishing.

IV. A SECOND PREFERRED EMBODIMENT ETCH STACK AND ITS METHOD OF USE

FIGS. 3A-3G illustrate the second preferred embodiment etch stack of thepresent invention and its progression through the method steps of thepresent invention. FIG. 3A shows the complete etch stack, including:Substrate 312, which was a dielectric layer of silicon dioxideapproximately 10,000 Å thick overlying a silicon wafer surface (notshown). A barrier layer 314, of tantalum nitride approximately 500 Åthick was deposited over substrate 312. A layer 316 of copperapproximately 8,000 Å thick was deposited over barrier layer 314. Alayer 218 of tantalum nitride about 500 Å thick was deposited overcopper layer 216. A layer 220 of a high-temperature organic-basedpattern masking material comprising α-FC was deposited over titaniumnitride layer 218 using a high density plasma CVD technique, to producea layer approximately 8,000 Å thick. And, finally, a layer 322 of plasmapolymerized methylsilane (PPMS) was deposited from a low power RF plasmadischarge in methylsilane at room temperature, to produce a layerapproximately 1,000 Å thick.

Subsequently, the PPMS layer was imaged using deep UV in the presence ofoxygen to produce a glass-like siloxane pattern 324 within PPMS layer322, as shown in FIG. 3B. FIG. 3C illustrates the pattern development ofthe PPMS high temperature imaging layer 324, which was developed usingchlorine plasma etching by techniques known in the art (as described byT. W. Weidman et al., Journal of Photopolymer Science and Technology,Volume 8, Number 4, 679-686 (1995)).

Subsequently, as shown in FIG. 3D, the underlying α-FC layer 320 wasetched using an oxygen-based plasma in the manner described above withreference to FIG. 2B, where α-FC layer 220 was patterned. The timeperiod required for pattern transfer through α-FC layer 320 wasapproximately 80 seconds. The oxygen-based plasma chemistry was chosenso that the patterned silicon dioxide 324 formed from thehigh-temperature imageable material (PPMS) layer 322 and tantalumnitride barrier layer 318 would not be attacked during etching of α-FClayer 320. The oxygen-based etch conditions referenced above providedanisotropic etch conditions so that undercutting of the α-FC layer 320during pattern development was avoided.

FIG. 3E shows the transfer of the pattern through tantalum nitridebarrier layer 318, copper layer 316, and tantalum nitride barrier layer314 to the upper surface of silicon dioxide dielectric layer 312. Thisetching of the conductive copper layer 316 and accompanying barrierlayers 318 and 314 was accomplished using the method described withreference to FIG. 2E.

Depending on the relative thicknesses of layers α-FC layer 320, tantalumnitride 318, copper layer 316, and tantalum nitride layer 314 and theetching conditions used, there should be enough of the α-FC layer 320remaining at the end of the etch process to provide CD (criticaldimension) control. Therefore, a separate process is needed to removethe remaining portion of this α-FC layer. The process for stripping theα-FC layer may be carried out in the feature patterning etch chamber orin a downstream plasma chamber.

FIG. 3F shows the patterned feature layer 316 with accompanying barrierlayers 318 and 314, after removal of the remaining portion of the α-FClayer 320. Preferably the α-FC layer 320 is removed via anisotropicstripping using a hydrogen based chemistry of the kind described aboveor a wet stripping process using a solvent which assists in thepassivation of the etched copper feature surface. In the presentinstance, an anisotropic dry stripping technique, as described withreference to FIG. 2F was used.

FIG. 3G shows the application of a planarization layer 328 of a lowdielectric constant material such as an α-C or an α-FC over thepatterned tantalum nitride layer 318, copper layer 316, tantalum nitridelayer 314, and silicon dioxide substrate 312. The inter-metal dielectriclayer exhibited a relatively planar surface, compared with the nonplanarsurface 120 observed for the prior art planarization layer illustratedin FIG. 1E. Preferably the α-C or an α-FC is applied using a vapordeposition technique known in the art, although spin-on techniques, forexample, are also acceptable.

One skilled in the art will recognize that other precursor materials canbe used to create a photosensitive siloxane material similar to PMMS, toproduce a satisfactory mask layer for pattern transfer to thehigh-temperature organic-comprising masking material. In addition, oneskilled in the art will recognize that other high-temperatureorganic-based masking materials, ARC materials, barrier layer materials,and conductive materials, such as those previously listed (and not byway of limitation) can be used.

It is important to mention that when copper is used as the conductivematerial the etching methods disclosed in U.S. application Ser. Nos.08/891,410, and 08/911,878, referenced above, are recommended for use incombination with the methods of the invention described herein.

In particular, Application Ser. No. 08/891,410 discloses that copper canbe pattern etched at acceptable rates and with selectivity over adjacentmaterials using an etch process which utilizes a solely physical basissuch as ion bombardment, without the need for a chemically based etchcomponent.

A first preferred enhanced physical bombardment technique requires anincrease in ion density and/or an increase in ion energy of ionizedspecies which strike the substrate surface. An increase in ion densityis preferably achieved by placing a device inside the etch chamber abovethe substrate surface, which device enables an increase in the number ofionized particles striking the substrate surface. An example of such adevice is an inductive coil which is used to create a high densityplasma having an increased number of active species or to maintain thenumber of active species supplied by another source so that an increasednumber of ionized species are available to strike the substrate surface.

A second preferred method for increasing the number of ionized speciesis to feed into the process chamber a microwave-generated plasmaproduced outside of the chamber. It is also possible to increase thenumber of ionized species by increasing the RF power to an externalinductively coupled coil or to increase the DC power to a capacitivelycoupled source for ion species generation. However, these latter twotechniques are less preferred methods for increasing ion density, sincethe copper (and alloy metal(s)) atoms generated during etching affectthe performance of an external coil and since capacitively coupledspecies generation is not very efficient. By ion energy, it is meant theenergy of the ion at the time it strikes the substrate surface. A secondpreferred enhanced physical bombardment technique is increasing (to thelimit that the substrate is detrimentally affected) the ion energy. Ionenergy may be increased by increasing an offset bias on the substratewhich attracts the ionized species toward the substrate. This istypically done by increasing the RF power to a platen on which thesubstrate sets. The effectiveness of an increase in the bias power isdependent upon the RF frequency and the ratio of the bias grounding areato the surface area of the substrate. Ion energy is further increased byoperating the etch process chamber at a lower pressure, typically downto about 20 mT, depending on the gases present.

A technique which is beneficial in tuning the physical bombardment usedin a sputtering process is a pulsing of the ion density or the ionenergy. One preferred means of pulsing the ion energy is to pulse thepower to the device which produces the ion species or which is used toincrease or maintain the number of ionized species available to strikethe substrate surface. Such pulsing is preferably applied to a devicelocated internally within the process chamber. The pulsing may be of thefeed rate of an externally-generated plasma into the process chamber.Less preferably, the pulsing may be applied to an external inductivelycoupled source for plasma generation or to a capacitively coupled sourcefor plasma generation. An even more preferred means of pulsing the ionenergy is by pulsing the power to the offset bias source which isapplied to the substrate. Pulsing of the ion energy reduces thepossibility that an excited copper atom leaving the copper surfaceduring etching will reattach to the copper surface in an adjacentlocation. The pressure in the process vessel may also be pulsed as ameans of pulsing the ion energy.

Another technique which is beneficial in tuning the physical bombardmentis the use of thermal phoresis. Thermal phoresis occurs when thetemperature of the substrate surface is higher than the temperature ofthe etch chamber surfaces (walls), whereby particles dislodged from thehigher temperature substrate surface are attracted toward the colderchamber surfaces, whereby improved removal of copper from the etchsurface is achieved.

It is possible to use a combination of physical ion bombardment with achemically reactive ion component, so long as the concentration of thechemically reactive ion component is sufficiently low that the etchingis carried out in a physical bombardment dominated etch regime.Preferably this combination technique is carried out at temperaturesabove about 150° C. and at pressures below about 50 mT. Since theadditional energy provided by the physical bombardment is added to theformation of volatile chemical reaction-generated compounds, the copperremoval rate is not limited solely to the rate of formation of thevolatile compounds and the ability of a low process chamber pressure tofacilitate removal of such volatile compounds. When physical ionbombardment dominates the etch process, the pressure in the processchamber can be adjusted, to permit increased ion bombardment. An overallsynergistic effect occurs, enhancing the copper atom removal rate. Thepreferred chemically reactive ion species is a halogen-comprisingspecies or compound having a low molecular weight, such as Cl₂, HCl,BCl₃, HBr, CHF₃, CF₄, SiCl₄, and combinations thereof. When achlorine-comprising species is used, the chlorine-comprising componentspresent in the feed gases to the etch chamber should be no greater than30 volume % of the gases fed into the etch chamber during the patternedcopper etch. A passivating agent such as N₂, NH₃, and CH₄ may be used incombination with the chemically reactive ion species. The content ofcopending application Ser. No. 08/891,410 is hereby incorporated byreference in its entirety.

Application Ser. No. 08/911,878 describes an alternative copper etchingtechnology which employs HCl and HBr chemistries in a manner whichprotects copper from corrosion during the etching process. Inparticular, copper can be pattern etched in the presence of HCl or HBrwhile providing the desired feature dimension and integrity if thesurface of the copper feature being etched is properly protected duringetching. To avoid the trapping of reactive species which can act as acorrosive agent interior of the etched copper surface, hydrogen isapplied to that surface. Hydrogen is adsorbed on the copper exteriorsurface and may be absorbed through the exterior surface of the copperinto the bulk copper, so that it is available to react with specieswhich would otherwise penetrate that exterior surface and react with thecopper interior to that surface. Sufficient hydrogen must be applied tothe exterior surface of the etched portion of the copper feature toprevent incident reactive species present due to etching of adjacentfeature surfaces from penetrating the previously etched feature exteriorsurface.

Although any plasma feed gas component comprising hydrogen, which iscapable of generating sufficient amounts of hydrogen, may be used, themost preferred embodiment of the invention provides for the use of acomponent which contains both hydrogen and halogen. Preferred examplesare hydrogen chloride (HCl) and/or hydrogen bromide (HBr), which areused as the principal source of the reactive species for etching copper.Dissociation of the HCl and/or HBr provides large amounts of hydrogenfor protection of etched copper surfaces, thereby preventing penetrationby reactive species adjacent the etched surface. Additional hydrogen gasmay be added to the plasma feed gas which comprises the HCl and/or HBrwhen the reactive species density in the etch process chamber isparticularly high. The hydrogen-releasing, halogen-comprising plasmafeed gas component may be used as an additive (producing less than 40%of the plasma-generated reactive species) in combination with otherplasma etching species.

When HCl and/or HBr is used as the principal source of reactive speciesfor the copper etching, the HCI or HBr are the source for at least 40%,and more preferably at least 50%, of the reactive species generated bythe plasma. Other reactive species may be used for purposes of featuresurface passivation during etching or for purposes of feature surfaceprotection after completion or near the completion of feature surfaceetching. The species added for surface passivation or surface protectionduring etching of the copper feature preferably make up 30% or less, ormore preferably make up 10% or less of the plasma-generated reactivespecies. By way of example, additional gases which may be added to theplasma feed gas include CH₄, CH₃F, BCl₃, N₂, NH₃, SiCl₄, CCl₄, and CHF₃.Plasma feed gases may include additional inert (non-reactive withcopper) gases such as argon, helium, or xenon, to enhance theionization, or dissociation, or to dilute the reactive species. Thecritical feature is the availability of hydrogen at the feature surfaceduring the etching process. The content of U.S. application Ser. No.08/911,878 is hereby incorporated by reference in its entirety.

FIGS. 3A through 3D can also be used to describe a second embodiment ofthe present invention in which the specialized etch chemistry previouslydescribed is used to prepare a contact via, in the manner described withreference to FIGS. 2A through 2C. In this instance the location of theconductive lines is indicated by identification number 321, withopenings 323 showing the contact vias into which a conductive materialis deposited. By way of explanation, with reference to FIGS. 3A through3D, if layer 320 is a low k dielectric (or other dielectric organicpolymer layer), subsequent to patterning of the layer, a diffusionbarrier layer and/or a wetting layer (not shown) is applied over theetched surfaces, followed by deposition of a conductive layer (notshown). The excessive conductive material (not shown) overlying the maskpatterning layer 324 (and mask patterning layer 324, if desired) is thenremoved either by etch back or by chemical-mechanical polishing.

V. APPLICATION OF THE METHOD OF THE INVENTION FOR ETCHING ALUMINUM

During discussion of the preferred embodiments of the invention above,it was mentioned that the invention is also useful for conductivematerials which can be etched at lower temperatures (below about 200°C.), and particularly for aluminum and tungsten. Although standardphotoresist materials can be used as the masking material for aluminumwhen feature size of the pattern is larger than about 0.25 μm, atsmaller feature sizes selectivity becomes a problem. At these smallergeometries, as etching progresses, the structural angles involvedresults in more rapid deformation of the masking pattern profile,affecting the etch profile. With this in mind, it is necessary totransfer the pattern from the photoresist into a thicker and/or morestable masking material which can maintain the desired pattern profilefor a longer time period in the aluminum etch plasma. A thicker maskingmaterial results in an increased aspect ratio which can lead to shadingdamage of underlying device structures, as previously described. Withthis in mind, a more stable hard masking material such as silicon oxideor silicon nitride is preferable. This masking material, which providesbetter etch selectivity toward aluminum, can be a thinner patternedlayer and still provide the etch time necessary to transfer the desiredpattern to underlying layers.

However, when a hard masking material is used, the problem of removal ofthe residual masking material occurs, as previously described. Often thehard masking material is a silicon oxide and the substrate underlying apatterned aluminum interconnect structure is also silicon oxide. Thismakes it difficult to remove the masking material without damaging thesubstrate.

It is possible to leave residual hard masking material atop a patternedaluminum feature, but this affects the functionality of the finisheddevice. To improve the operational speed of the device, it is preferableto use a low k dielectric as the inter-metal dielectric (for fillinggaps between lines and as the dielectric layer which is etched toprovide for contact vias). The effectiveness of the low k dielectric inincreasing device speed is substantially impacted by the presence ofresidual high dielectric constant material such as silicon dioxide.Further, if a residue of silicon dioxide remains on top of a metalstructure which is to become part of a multi-layer metal device, theremay be a problem in subsequent process steps. When a silicon dioxidehard mask is used for pattern transfer through an organic polymericdielectric overlying the metal structure, prior to reaching the metalsurface the etching may stop on silicon dioxide residue overlying thesurface of the metal structure.

The method of the present invention makes it possible to use easilyremovable masks which are more resistant to aluminum etch plasmas thanphotoresist.

When aluminum is the metal layer being patterned, the method is the sameas described with reference to the First and Second PreferredEmbodiments, as described with respect to FIGS. 2A through 2G and FIGS.3A through 3G, with the following major exceptions (there may be otherminor differences which will be understood and appreciated by oneskilled in the art). Typically the barrier layer is titanium nitriderather than tantalum nitride; the substrate temperature during etchingof the aluminum layer is less than about 150° C., preferably less thanabout 90° C., with the process chamber walls at about 80° C. Plasmasource gas composition during etching of the aluminum layer willtypically be 150-30 sccm of Cl₂/100-0 sccm of BCl₃/0-40 sccm N₂/0-20sccm CH_(x)F_(y) (where x ranges from 0 to about 4 and y ranges from 0to about 4). The process chamber pressure during etching generallyranges between about 5 mT and 50 mT. The source power to theplasma-inducing coil typically ranges from about 500 W to about 2,000 W@ 2 MHZ and the bias power to the substrate support platen ranges fromabout 50 to about 250 W @ 13.56 MHZ.

When the high temperature organic-based masking material used in thepresent invention is a low k dielectric material, for example but not byway of limitation, Poly(arylene)ethers, Poly(arylene)ether oxazoles,Parylene-N, Polyimides, Polynaphthalene-N, Polyphenyl-Quinoxalines,Polybenzoxazoles, Polyindane, Polynorborene, Polystyrene,Polyphenyleneoxide, Polyethylene, Polypropylene, divinylsiloxanebis-benzocyclobutene (BCB), or αC, this may offer an added advantagewhen a low k dielectric material is also be used to form theelectrically insulating layer which is applied over the patterned metallayer.

VI. SPECIALIZED ETCH CHEMISTRY USEFUL IN COMBINATION WITH THE ETCH STACK

A second embodiment of the present invention pertains to a specializedetch chemistry useful in patterning silicon-free organic polymericlayers such as low k dielectrics and other organic interfacial layers.This etch chemistry is particularly useful when the conductive materialin a multilayered etch stack is copper, or when copper is the conductivefill material used for formation of a contact via, or in a damascene ordual damascene process.

By way of explanation, in a damascene process, the process steps wouldtypically include: blanket deposition of a dielectric material;patterning of the dielectric material to form openings; deposition of adiffusion barrier layer and, optionally, a wetting layer to line theopenings; deposition of a conductive layer such as copper, tungsten, oraluminum onto the substrate in sufficient thickness to fill theopenings; and removal of excessive conductive material from thesubstrate surface using chemical-mechanical polishing (CMP) techniquesor etch-back techniques. The damascene process is described in detail byC. Steinbruchel in “Patterning of copper for multilevel metallization:reactive ion etching and chemical-mechanical polishing”, Applied SurfaceScience 91 (1995) 139-146.

In particular, the etch chemistry of the present invention provides foruse of etchant plasma species wherein the content of at least oneetchant species selected from the group consisting of oxygen, fluorine,chlorine, and bromine is minimized. Preferably, when the conductivematerial is copper, essentially none of the plasma source gas materialfurnishes reactive species comprising oxygen, fluorine, chlorine, orbromine. Etchant species which contain oxygen, fluorine, chlorine orbromine leave deposits of etch byproduct which are chemically harmful tothe copper structures which they contact, typically reducing theconductivity of such layers. Further, oxygen etchant species tend tohave a detrimental effect on a typical contact via or trench wall etchprofile.

When the conductive material is aluminum, tungsten, platinum, oriridium, rather than copper, the presence of oxygen is more acceptableduring etch of the organic polymeric material, as previously mentioned.The effect of the presence of various halogens depends on the particularmetal used. However, even when the conductive material is aluminum,tungsten, platinum, or iridium, oxygen-comprising or halogen etchantspecies are typically used as additives to increase etch rate or improveetch profile, but are not the principal etchant species for etching ofthe organic, polymeric material.

The preferred etch plasma of the present invention is ahydrogen/nitrogen-based plasma having principally hydrogen-comprisingand/or nitrogen-comprising etchant species. In addition, as describedabove, depending on the materials used in the device fabrication, theconcentration of at least one etchant species generated from a sourcecomprising an element selected from the group consisting of oxygen,chlorine, fluorine, and bromine is minimized. To provide ahydrogen/nitrogen-based plasma, the plasma etchant species compriseprincipally hydrogen, or principally nitrogen, or principally a mixturethereof. To provide these species, the plasma source gas comprises atleast one of the materials selected from the group consisting ofhydrogen, nitrogen, ammonia and compounds thereof, hydrazine andcompounds thereof, hydroazoic acid, and combinations thereof. When theconductive material to be used in the device is not copper, but isinstead aluminum, tungsten, platinum, or iridium, the plasma source gasmay comprise hydroxylamine or a compound thereof. The most preferredplasma source gas comprises ammonia; or hydrogen and nitrogen; or acombination of ammonia with hydrogen, nitrogen, or both.

Other gases which provide essentially non-reactive etchant species, suchas argon, helium, neon, krypton, and xenon may be present in varyingamounts, by way of example, and not by way of limitation. In particular,when the organic, polymeric material being etched serves as a patterningmask for etch of a copper film, or when the organic, polymeric materialbeing etched is part of a damascene structure which is to be filled withcopper, the etch chemistry provides for use of etchant plasma specieswhere the oxygen, fluorine, chlorine, and bromine content is minimized.Preferably, essentially none of the plasma source gas material furnishesreactive species comprising oxygen, fluorine, chlorine, or bromine. Whena patterning mask for etch of a copper film is prepared, should theseetchant species contact the copper film, the film is oxidized orotherwise corroded. In addition, etchant species which contain oxygen,fluorine, chlorine or bromine leave deposits of etch byproduct on etchedcontact via and damascene structure surfaces which may cause oxidationand corrosion of copper depositions made over such surfaces. Further,during etching of some organic-comprising materials, oxygen and fluorineetchant species tend to have a detrimental effect on a typical contactvia or trench etch profile.

When the conductive material is aluminum, tungsten, platinum, oriridium, rather than copper, the presence of oxygen is more acceptableduring etch of the organic polymeric material. When the metal fill layeris tungsten, platinum, or iridium, the effect of the presence offluorine, chlorine and bromine depends on the particular material used,as is known to one skilled in the art. However, even when the conductivematerial is aluminum, tungsten, platinum or iridium, oxygen-comprisingor halogen etchant species are typically used as additives to increaseetch rate or improve etch profile, or to control residue on an etchsurface, but are not the principal etchant species for etching of theorganic, polymeric material.

FIG. 4A shows a schematic of a cross-sectional view of a test wafercomprising a series of etched contact vias 405 overlying an aluminumlayer 408. (In a damascene process or a dual damascene process, aluminumlayer 408 would be replaced by a series of lines or other multi-leveledinterconnect structures.) Each contact via 405 is created through amultilayered etch stack structure 400, which includes, from top tobottom, a layer of silicon oxide patterned hard mask 402, and a layer ofFLARE™ low k dielectric 404. Underlying the low k dielectric layer 404is a layer of titanium nitride 406, and underlying the titanium nitrideis a layer of aluminum 408. Due to the etch chemistry used to etch thevia, the low k dielectric, a poly(arylene ether), is severely undercutbeneath the patterned silicon oxide hard mask.

In detail, the multilayer etch stack included: A silicon dioxide layer(TEOS) 402 approximately 2,000 Å thick; and a FLARE™ 2.0 low kdielectric layer 404 (a polyarylene ether, available from Allied Signal,Advanced Microelectronic Materials, Sunnyvale, California) approximately8,000 Å thick. Underlying the low k dielectric layer 404 was anunderlying titanium nitride layer 406 approximately 800 Å thick, andunderlying that was an aluminum layer 408 approximately 5,000 Å thick.The feature size of the vias was about 0.3 μm and the aspect ratio wasabout 4:1 (including the silicon dioxide layer 402 and the low kdielectric layer 404). The etching processes were carried out in aCENTURA® Metal Etch Integrated Processing System including a decoupledplasma source (DPS), available from Applied Materials, Inc. of SantaClara, Calif., under the following set of conditions, which generallyprovided a high density plasma.

The silicon dioxide layer was etched through a patterned 1 μm thickmasking layer of DUV photoresist (which is not shown in FIG. 4A). Theplasma source gas for etching silicon dioxide layer 402 was 100 sccm ofargon, 60 sccm of CHF₃, and 20 sccm of CF₄. The Source Power was about2,000 W at a frequency of about 2 MHZ; the Bias Power was about 600 W ata frequency of about 13.56 MHZ; the substrate support platen (cathode)temperature was about 30° C.; the helium pressure on the backside of the200 mm wafer substrate was about 12 Torr; the process chamber pressurewas about 10 mT; the chamber wall temperature was about 80° C.; and theetch time was about 30 seconds.

The FLARE™ 2.0 low k dielectric layer 404 was sequentially etched in thesame process chamber using a plasma source gas of 60 sccm of oxygen. TheSource Power was about 1200 W; the Bias Power was about 400 W; thesubstrate support platen temperature was about 30° C.; the heliumbackside pressure was about 7 Torr; the process chamber pressure wasabout 8 mT; the chamber wall temperature was about 80° C.; and the etchtime was about 60 seconds.

FIG. 4B shows a schematic of a cross-sectional view of the same seriesof etched contact vias shown in FIG. 4A, except that the etch chemistryof the present invention was used to provide nearly straight sidewallson the etched via.

The silicon dioxide layer was etched through a patterned, 1 μm thickmasking layer of DUV photoresist (which is not shown in FIG. 4B). Theplasma source gas for the etching of silicon dioxide layer 422 was 100sccm of argon, 60 sccm of CHF₃, and 20 sccm of CF₄. The Source Power wasabout 2,000 W; the Bias Power was about 600 W; the substrate supportplaten (cathode) temperature was about 5° C.; the helium pressure on thebackside of the 200 mm wafer substrate was about 7 Torr; the processchamber pressure was about 10 mT; the chamber wall temperature was about80° C.; and the etch time was about 30 seconds. Subsequent to this etchstep, the etch processing chamber was dry-cleaned using an oxygenplasma, and seasoned by etching unpattemed photoresist in an ammonia(NH₃) plasma.

The FLARE™ 2.0 low k dielectric layer 404 was etched using a plasmasource gas of 70 sccm of NH₃. The Source Power was about 1800 W; theBias Power was about 300 W; the substrate support platen temperature wasabout 5° C; the helium backside pressure was about 16 Torr; the processchamber pressure was about 8.5 mT; the chamber wall temperature wasabout 80° C.; and the etch time was about 140 seconds.

When an integrated series of etch steps is carried out in a singleprocess chamber and an etch step produces a fluorine-comprisingbyproduct, it is advisable to dry clean the process chamber subsequentto that etch step and prior to proceeding to an etch step in which anorganic polymeric material is etched. This is particularly importantwhen the feature size of the pattern being etched is 0.25 μm or smaller.

In an additional experiment, all etch process conditions were the sameas those which produced the straight sidewalls shown in FIG. 4B, butthere was no dry cleaning of the etch process chamber between theetching of the silicon dioxide layer (using a fluorine-containingetchant species) and the etching of the low k dielectric layer. The etchprofile was nearly the same as that shown in FIG. 4B, except that theupper surface of the silicon dioxide layer was attached and becamefaceted. Faceting refers to the corner edges of the hard mask beingetched so that they become cut off and the mask opening becomes widened,resulting in a larger upper contact surface area. If the next layer ofmetal lines is slightly misaligned, this can result in shorting of metallines in the device. An increased presence in the amount of fluorinebyproduct resulted in increased faceting of the hard mask corners.

The etch chemistry described above can be used to etch other organic,polymeric layers, and especially low k dielectric materials such asSILK™, an organic polymer similar to BCB (divinylsiloxanebis-benzocyclobutene), which does not contain silicon, available fromDow Chemical Co., Midland Mich.; FLARE™ 2.0™, a poly(arylene ether)available from Allied Signal Advanced Microelectronic Materials,Sunnyvale, Calif., which does not contain fluorine, despite its name.Although SILK™, and FLARE 2.0™ have been determined to work well, thereare numerous other low k dielectric materials which are expected tobehave in a similar manner when etched in accordance with the method ofthe present invention, using the etch chemistry described herein.Preferably these other low k dielectric materials do not include siliconor fluorine. Other non-fluorine-containing low k dielectrics includepoly(arylene)ethers; Poly(arylene)ether oxazoles; Parylene-N;Polyimides; Polynapthalene-N; Polyphenyl-Quinoxalines (PPQ);Polybenzoxazoles; Polyindane; Polynorborene; Polystyrene;Polyphenyleneoxide; Polyethylene; Polypropylene; and similar materials.

A hydrocarbon-based plasma of the kind previously described can be usedto etch organic polymeric layers in the manner described above. In onepreferred embodiment, the principal plasma source gas is methane (CH₄).However, typically the methane is used in combination with ammonia,hydrogen, nitrogen, or a combination thereof. Chemically inert gases maybe used as diluents. The volumetric flow rate of the source gas for theprincipal etchant species is in the range of about 50-100 sccm, withadditive etchant species source gases, if any, being present in lesseramounts. Overall etch process variables are in the same ranges as thoseprovided above for a hydrogen/nitrogen plasma in the CENTURA® METALETCH, DPS processing system.

In conclusion, the use of new (other than aluminum) conductive materialssuch as copper, platinum and iridium, in combination with highdielectric constant materials such as barium strontium titanate, and lowdielectric constant materials such as FLARE® and SILK®, permits thecontinuing down scaling of integrated circuit devices and systemswhile-providing improved performance. In addition use of such materialsenables reduced power consumption as well as new device functionality.The methods of the present invention make it possible to take advantageof these new materials.

The above described preferred embodiments are not intended to limit thescope of the present invention, as one skilled in the art can, in viewof the present disclosure expand such embodiments to correspond with thesubject matter of the invention claimed below.

We claim:
 1. A method of pattern etching an organic polymeric layer,comprising the steps of: (a) providing a layer of an organic polymericmaterial having on its surface a patterned material which serves as amask for purposes of pattern transfer, wherein said organic polymericmaterial is stable at temperatures ranging from about 150° C. to about500° C.; and (b) contacting said organic polymeric layer with an etchantplasma which is principally a hydrogen/nitrogen-based plasma, whereinsaid etchant plasma has an electron density of at least 5×10¹⁰ e⁻/cm³.2. The method of claim 1, wherein said etchant plasma containsessentially no oxygen-comprising, fluorine-comprising,chlorine-comprising or bromine-comprising species.
 3. The method ofclaim 1, wherein a source gas used to produce saidhydrogen/nitrogen-based plasma comprises ammonia, or hydrogen, ornitrogen, or a combination thereof.
 4. The method of claim 3, whereinsaid hydrogen/nitrogen-based gas includes a non-reactive etchantspecies.
 5. The method of claim 4, wherein said non-reactive etchantspecies is selected from the group consisting of argon, helium, neon,krypton, and xenon.
 6. The method of claim 3, wherein said patterntransferred is one useful in a damascene or dual damascene structure. 7.The method of claim 1, wherein said etchant plasma source gas includesan additive material which is used to control etch profile or to controlresidue at an etch surface.
 8. The method of claim 1, wherein saidpattern transferred is one useful in a damascene or dual damascenestructure.
 9. The method of claim 1, wherein said organic polymericlayer is included within a semiconductor structure which includes alayer of a material which is typically etched at a temperature rangingfrom about 150° C. to about 500° C.
 10. The method of claim 9, whereinsaid material which is typically etched at a temperature ranging fromabout 150° C. to about 500° C. is selected from the group consisting ofcopper, platinum, silver, gold, and iridium.
 11. The method of claim 1,wherein said etchant plasma further includes an additive gas which isprovided for the purpose of increasing etch rate, improving etchprofile, or controlling residue on an etch surface.
 12. The method ofclaim 11, wherein said additive gas is selected from the groupconsisting of oxygen, fluorine, chlorine, bromine, and combinationsthereof.
 13. The method of claim 12, wherein said organic polymer layeris included within a semiconductor structure which does not include amaterial which is harmed by the presence of oxygen, fluorine, chlorine,or bromine.
 14. The method of claim 13, wherein said semiconductorstructure does not include copper.
 15. The method of claim 12, whereinsaid pattern etching of said organic polymer layer is performed as partof an integrated series of processing steps which are carried out withina single processing chamber, and wherein said method further comprisesthe step: (c) dry cleaning said processing chamber subsequent to theperformance of step (b), and prior to the performance of subsequentprocessing steps.
 16. A method of pattern etching a low k dielectriclayer, comprising the steps of: (a) providing a layer of a low kdielectric material having on its surface a patterned material whichserves as a mask for purposes of pattern transfer; and (b) contactingsaid low k dielectric layer with an etchant plasma which is principallya hydrogen/nitrogen-based plasma, wherein said etchant plasma has anelectron density of at least 5×10¹⁰ e⁻/cm³.
 17. The method of claim 16,wherein said low k dielectric material is stable at temperatures rangingfrom about 150° C. to about 500° C.
 18. The method of claim 17, whereinsaid low k dielectric material is selected from the group consisting ofPoly(arylene)ethers, Polyl(arylene)ether oxazoles, Parylene-N,Polyimides, Polynaphthalene-N, Polyphenyl-Quinoxalines,Polybenzoxazoles, Polyindane, Polynorborene, Polyphenyleneoxide, αC, andcombinations thereof.
 19. The method of claim 17, wherein said low kdielectric layer is included within a semiconductor structure whichincludes a layer of a material which is typically etched at atemperature ranging from about 150° C. to about 500° C.
 20. The methodof claim 19, wherein said material which is typically etched at atemperature ranging from about 150° C. to about 500° C. is selected fromthe group consisting of copper, platinum, silver, gold, and iridium. 21.The method of claim 16, wherein said low k dielectric material isselected from the group consisting of Poly(arylene)ethers,Polyl(arylene)ether oxazoles, Parylene-N, Polyimides, Polynaphthalene-N,Polyphenyl-Quinoxalines, Polybenzoxazoles, Polyindane, Polynorborene,Polystyrene, Polyphenyleneoxide, Polyethylene, Polypropylene, αC, andcombinations thereof.
 22. The method of claim 16 or claim 21, whereinsaid etchant plasma contains essentially no oxygen-comprising,fluorine-comprising, chlorine-comprising, or bromine-comprising species.23. The method of claim 16 or claim 21, wherein saidhydrogen/nitrogen-based plasma is generated from a source gas whichcomprises ammonia, or hydrogen, or nitrogen, or a combination thereof.24. The method of claim 23, wherein said source gas includes anon-reactive etchant species.
 25. The method of claim 24, wherein saidnon-reactive etchant species is selected from the group consisting ofargon, helium, neon, krypton, and xenon.
 26. The method of claim 16 orclaim 21, wherein said etchant plasma is generated from a source gaswhich includes an additive material which is used to control etchprofile or to control residue at an etch surface.
 27. The method ofclaim 26, wherein said additive material is a gas selected from thegroup consisting of oxygen, fluorine, chlorine, bromine, andcombinations thereof.
 28. The method of claim 27, wherein said low kdielectric layer is included within a semiconductor structure which doesnot include a material which is harmed by the presence of oxygen,fluorine, chlorine, or bromine.
 29. The method of claim 28, wherein saidsemiconductor structure does not include copper.
 30. The method of claim27, wherein said pattern etching of said low k dielectric layer isperformed as part of an integrated series of processing steps which arecarried out within a single processing chamber, and wherein said methodfurther comprises the step: (c) dry cleaning said processing chambersubsequent to the performance of step (b), and prior to the performanceof subsequent processing steps.
 31. The method of claim 16 or claim 21,wherein said pattern transferred is one useful in a damascene or dualdamascene structure.
 32. A method of pattern etching an organic low kdielectric layer, comprising the steps of: (a) providing a layer of alow k dielectric material having on its surface a patterned materialwhich serves as a mask for purposes of pattern transfer; and (b)contacting said low k dielectric layer with an etchant plasma which isprincipally a hydrocarbon-based plasma.
 33. The method of claim 32,wherein said organic low k dielectric material is selected from thegroup consisting of Poly(arylene)ethers, Polyl(arylene)ether oxazoles,Parylene-N, Polyimides, Polynaphthalene-N, Polyphenyl-Quinoxalines,Polybenzoxazoles, Polyindane, Polynorborene, Polystyrene,Polyphenyleneoxide, Polyethylene, Polypropylene, αC, and combinationsthereof.
 34. The method of claim 32 or claim 33, wherein said etchantplasma contains essentially no oxygen-comprising, fluorine-comprising,chlorine-comprising, or bromine-comprising species.
 35. The method ofclaim 34, wherein a source gas used to produce said hydrocarbon-basedplasma is methane.
 36. The method of claim 35, wherein said source gasincludes a non-reactive etchant species.
 37. The method of claim 36,wherein said non-reactive etchant species is selected from the groupconsisting of argon, helium, neon, krypton, and xenon.
 38. The method ofclaim 34, wherein said hydrocarbon-based plasma is a high densityplasma.
 39. The method of claim 32 or claim 33, wherein said patterntransferred is one useful in a damascene or dual damascene structure.40. The method of claim 32, wherein said etchant plasma further includesan additive gas which is provided for the purpose of increasing etchrate, improving etch profile, or controlling residue on an etch surface.41. The method of claim 40, wherein said additive gas is selected fromthe group consisting of oxygen, fluorine, chlorine, bromine, andcombinations thereof.
 42. The method of claim 41, wherein said low kdielectric layer is included within a semiconductor structure which doesnot include a material which is harmed by the presence of oxygen,fluorine, chlorine, or bromine.
 43. The method of claim 42, wherein saidsemiconductor structure does not include copper.
 44. The method of claim41, wherein said pattern etching of said low k dielectric layer isperformed as part of an integrated series of processing steps which arecarried out within a single processing chamber, and wherein said methodfurther comprises the step: (c) dry cleaning said processing chambersubsequent to the performance of step (b), and prior to the performanceof subsequent processing steps.